重要研究成果
第 1 頁
第 2 頁
謝佳龍 博士
(2024)
ACS Photonics 11(12), 5239–5250 (2024)
Interferometric scattering (iSCAT) microscopy is currently among the most powerful techniques available for achieving high-sensitivity single-particle localization. This capability is realized through homodyne detection, where interference with a reference wave offers the promise of exceptionally precise three-dimensional (3D) localization. However, the practical application of iSCAT to 3D tracking has been hampered by rapid oscillations in the signal-to-noise ratio (SNR) as particles move along the axial direction. In this study, we introduce a novel strategy based on back pupil plane engineering, wherein a spiral phase mask is used to redistribute the phase of the scattered field of the particle uniformly across phase space, thus ensuring consistent SNR as the particle moves throughout the focal volume. Our findings demonstrate that this modified spiral phase iSCAT exhibits greatly enhanced localizability characteristics. Additionally, the uniform phase distribution enables reliable characterization of the particle’s optical properties regardless of its position. We substantiate our theoretical results with numerical and experimental demonstrations, showcasing the practical application of this approach for high-precision, ultrahigh-speed (20,000 frames per second) 3D tracking and polarizability measurement of freely diffusing nanoparticles as small as 20 nm.
謝雅萍 博士
(2024)
Nano Letters 24, 1, 67 (2024)
Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W5N6 over lower metal nitrides. Comprehensive structural and electronic characterization reveals that monolayer W5N6 can be synthesized at large scale and shows semimetallic behavior with an intriguing indirect band structure. Moreover, the material exhibits exceptional resilience against mechanical damage and chemical reactions. Leveraging these electronic properties and robustness, we demonstrate the application of W5N6 as atomic-scale dry etch stops that allow the integration of high-performance 2D materials contacts. These findings highlight the potential of 2D transition metal nitrides for realizing advanced electronic devices and functional interfaces.
謝雅萍 博士
(2024)
ACS Nano 18, 19828 (2024)
The edges of 2D materials have emerged as promising electrochemical catalyst systems, yet their performance still lags behind that of noble metals. Here, we demonstrate the potential of oriented electric fields (OEFs) to enhance the electrochemical activity of 2D materials edges. By atomically engineering the edge of a fluorographene/graphene/MoS2 heterojunction nanoribbon, strong and localized OEFs were realized as confirmed by simulations and spatially resolved spectroscopy. The observed fringing OEF results in an enhancement of the heterogeneous charge transfer rate between the edge and the electrolyte by 2 orders of magnitude according to impedance spectroscopy. Ab initio calculations indicate a field-induced decrease in the reactant adsorption energy as the origin of this improvement. We apply the OEF-enhanced edge reactivity to hydrogen evolution reactions (HER) and observe a significantly enhanced electrochemical performance, as evidenced by a 30% decrease in Tafel slope and a 3-fold enhanced turnover frequency. Our findings demonstrate the potential of OEFs for tailoring the catalytic properties of 2D material edges toward future complex reactions.
林靖衛 博士
(2024)
ACS Nano 18, 18534–18547 (2024).
Cytometry plays a crucial role in characterizing cell properties, but its restricted optical window (400-850 nm) limits the number of stained fluorophores that can be detected simultaneously and hampers the study and utilization of short-wave infrared (SWIR; 900-1,700 nm) fluorophores in cells. Here we introduce two SWIR-based methods to address these limitations: SWIR flow cytometry and SWIR image cytometry. We develop a quantification protocol for deducing cellular fluorophore mass. Both systems achieve a limit of detection of ~0.1 fg cell−1 within a 30-min experimental timeframe, using individualized, high-purity (6,5) single-wall carbon nanotubes as a model fluorophore and macrophage-like RAW264.7 as a model cell line. This high-sensitivity feature reveals that low-dose (6,5) serves as an antioxidant, and cell morphology and oxidative stress dose-dependently correlate with (6,5) uptake. Our SWIR cytometry holds immediate applicability for existing SWIR fluorophores and offers a solution to the issue of spectral overlapping in conventional cytometry.
羅佩凌 博士
(2024)
J. Phys. Chem. Lett.,15, 3733–3739 (2024)
The radical–radical reaction between OH and HO2 has been considered for a long time as an important reaction in tropospheric photochemistry and combustion chemistry. However, a significant discrepancy of an order of magnitude for rate coefficients of this reaction is found between two recent experiments. Herein, we investigate the reaction OH + HO2 via direct spectral quantification of both the precursor (H2O2) and free radicals (OH and HO2) upon the 248 nm photolysis of H2O2 using infrared two-color time-resolved dual-comb spectroscopy. With quantitative and kinetic analysis of concentration profiles of both OH and HO2 at varied conditions, the rate coefficient kOH+HO2 is determined to be (1.10 ± 0.12) × 10–10 cm3 molecule–1 s–1 at 296 K. Moreover, we explore the kinetics of this reaction under conditions in the presence of water, but no enhancement in the kOH+HO2 can be observed. This work as an independent experiment plays a crucial role in revisiting this prototypical radical–radical reaction.
目前位置:關於本所 / 重要研究成果 / 第 2 頁
中央研究院 原子與分子科學研究所版權所有 |
使用者條款、資訊安全與隱私權政策 |
保有個資檔案公開項目彙整表 |
行動版
地址: 106319 台北市羅斯福路四段一號 或 106923 臺北臺大郵局 第23-166號信箱
電話:886-2-2362-0212 傳真:886-2-2362-0200 電子郵件:iamspublic@gate.sinica.edu.tw
最後更新於 2026-01-14 15:37:06
地址: 106319 台北市羅斯福路四段一號 或 106923 臺北臺大郵局 第23-166號信箱
電話:886-2-2362-0212 傳真:886-2-2362-0200 電子郵件:iamspublic@gate.sinica.edu.tw
最後更新於 2026-01-14 15:37:06
中央研究院 原子與分子科學研究所