中央研究院 原子與分子科學研究所

We present a chemical vapor deposition (CVD) method to catalytically synthesize large-area, transferless, single-to few-layer graphene sheets using hexamethyldisilazane
(HMDS) on a SiO₂/Si substrate as a carbon source and thermally evaporated alternating Ni/Cu/Ni layers as a catalyst. The as-synthesized graphenefilms were characterized by Raman
spectroscopic imaging to identify single- to few-layer sheets. This HMDS-derived graphene layer is continuous over the entire growth substrate, and single- to trilayer mixed sheets can be up to 30μm in the lateral dimension. With the synthetic CVD method proposed here, graphene can be grown into tailored shapes directly on a SiO₂/Si surface through vapor priming ofHMDS onto predefined photolithographic patterns. The transparent and conductive HMDS-derived graphene exhibits itspotential for widespread electronic and opto-electronic applications.