中央研究院 原子與分子科學研究所

Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. HRTEM is employed to resolve the graphene and h-BN domain formation in great details. X-ray photoelectron, micro-Raman and UV-Vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of p-p^*band gap of graphene due to isoelectronic BN doping.