中央研究院 原子與分子科學研究所

In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO₂/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed carrier scattering, and reduced thermal activation of resistivity at room temperature were observed. Most interestingly, the remarkable magnetotransport of graphene devices with pronounced quantum Hall effect, strong Shubnikov-de Haas oscillations, a nonzero Berry’s phase, and a short carrier scattering time also confirms the high quality of graphene on this ultrasmooth organic SAM-modified platform. The high-performance graphene transistors on the solution-processable OTS SAM-functionalized SiO₂/Si substrates are promising for the future development of large-area and low-cost fabrications of graphene-based nanoelectronics.