News
2019-11-21
Congratulations to Dr. Kuei-Hsien Chen for his paper entitled, "Integration of a (–Cu–S–)n plane in a metal–organic framework affords high electrical conductivity", which was published in Nature Communications (2019, 10, 1721).
Congratulations to Dr. Kuei-Hsien Chen for his paper entitled, "Integration of a (–Cu–S–)n plane in a metal–organic framework affords high electrical conductivity", which was published in Nature Communications (2019, 10, 1721).

A new strategy for integrating a metal–sulfur plane within a MOF to achieve high electrical conductivity is reported. This successful design is significant for its potential applications in diverse areas encompassing energy storage and generation. Single crystals of a copper-based metal–organic framework consisting of 2D (–Cu–S–)n plane were synthesized by combining Cu(NO3)2 and 6,6สน-dithiodinicotinic acid via the in-situ cleavage of an S–S bond under hydrothermal conditions. This copper-based MOF was found to have a low activation energy (6 meV), small bandgap (1.34 eV) and a highest electrical conductivity (10.96 S cm−1) among MOFs for single crystal measurements. This study carried out by Kuang-Lieh Lu, Kuei-Hsien Chen, Li-Chyong Chen, Tien-Wen Tseng along with Michitoshi Hayashi, Ruei-San Chen, Fu-Rong Chen and their students provides an excellent example of interdisciplinary collaboration efforts. In addition, these results provide distinctive applications of highly conductive MOF in batteries, thermoelectric, supercapacitors and related areas.