Research and development of advanced materials including diamond films and nitride base thin such as cBN, GaN, C₃N₄ and SiCN are the main goal of the Thin Film Processing Laboratory. Among the physical properties of the new materials we emphasize on th optoelectronic properties and their potential applications.
　　For thin film deposition, we currently utilize microwave plasma enhanced CVD and PVD techniques such as magnetron sputtering, Ion-beam assisted sputtering materials and addition of buffer layers are attempted to grow films with desired structure.
　　For film characterization, we apply XRD, TEM, SEM, and AFM to investigate the structure and morphology of the material. Additional characterization techniques such as XPS, AES, RBS, WDX, IR, and EELS are performed to obtain the chemical composition and bonding, of the films. Photoluminescence, cathodoluminescence, pizoreflectance, photo-resistivity, ellipsometry, thermal conductivity, nano-indentation, and hall-measurement are used to study the optoelectronic properties and explore their potential for applications.
　　Research and development of new materials requires long-term efforts and collaboration of various expertise including physicist, chemist, electrical engineer, and material scientist. We sincerely invite participation and collaboration from all universities and institutes to create a new era of frontier materials.